THE SMART TRICK OF GERMANIUM THAT NO ONE IS DISCUSSING

s is always that in the substrate materials. The lattice mismatch results in a sizable buildup of strain Power in Ge levels epitaxially grown on Si. This strain Vitality is primarily relieved by two mechanisms: (i) era of lattice dislocations for the interface (misfit dislocations) and (ii) elastic deformation of the two the substrate as well as Ge